ISO 22415:2019
Surface chemical analysis — Secondary ion mass spectrometry — Method for determining yield volume in argon cluster sputter depth profiling of organic materials
This document specifies a method for measuring and reporting argon cluster sputtering yield volumes of a specific organic material. The method requires one or more test samples of the specified material as a thin, uniform film of known thickness between 50 and 1 000 nanometres on a flat substrate which has a different chemical composition to the specified material. This document is applicable to test samples in which the specified material layer has homogeneous composition in depth and is not applicable if the depth distribution of compounds in the specified material is inhomogeneous. This document is applicable to instruments in which the sputtering ion beam irradiates the sample using a raster to ensure a constant ion dose over the analysis area.
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Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols (and abbreviated terms)
5 Requirements
5.1 Test samples
5.2 Sputtering ion source
5.3 Analysis conditions
6 Data Acquisition
6.1 Analysis
6.2 Minimum data requirements
6.3 Data quality
7 Calculation of sputtering yield volume
7.1 Introduction
7.2 Determination of sputtering yield volume for a single layer profile
7.2.1 Introduction
7.2.2 First interface position
7.2.3 Interface position between two materials
7.2.4 Sputtering time
7.2.5 Calculation of sputtering yield volume using a single layer thickness
7.3 Determination of sputtering yield volume from profiles of layers of more than one thickness
7.3.1 Introduction
7.3.2 First interface
7.3.3 Interface between two materials
7.3.4 Areic dose of ions used for sputtering
7.3.5 Calculation of sputtering yield volume using more than one-layer thickness
8 Reporting of sputtering yield volume
8.1 Required information
Annex A (informative) Sputtered area and sputtering beam width
Annex B (informative) Examples of depth profile data
Annex C (informative) Estimation of sputtering yield volumes for argon clusters
Bibliography
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Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols (and abbreviated terms)
5 Requirements
5.1 Test samples
5.2 Sputtering ion source
5.3 Analysis conditions
6 Data Acquisition
6.1 Analysis
6.2 Minimum data requirements
6.3 Data quality
7 Calculation of sputtering yield volume
7.1 Introduction
7.2 Determination of sputtering yield volume for a single layer profile
7.2.1 Introduction
7.2.2 First interface position
7.2.3 Interface position between two materials
7.2.4 Sputtering time
7.2.5 Calculation of sputtering yield volume using a single layer thickness
7.3 Determination of sputtering yield volume from profiles of layers of more than one thickness
7.3.1 Introduction
7.3.2 First interface
7.3.3 Interface between two materials
7.3.4 Areic dose of ions used for sputtering
7.3.5 Calculation of sputtering yield volume using more than one-layer thickness
8 Reporting of sputtering yield volume
8.1 Required information
Annex A (informative) Sputtered area and sputtering beam width
Annex B (informative) Examples of depth profile data
Annex C (informative) Estimation of sputtering yield volumes for argon clusters
Bibliography