ISO 17560:2002
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.
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TitlePage - Surface chemical analysis— Secondary-ion mass spectrometry— Method for depth profil...
TableofContent - Contents Page
Foreword - Foreword
Introduction - Introduction
Scope - 1 Scope
NormativeReference - 2 Normative reference
Clause1 - 3 Symbols and abbreviated terms
Clause1 - 4 Principle
Clause1 - 5 Reference materials
Subclause2 - 5.1 Reference materials for determination of relative-sensitivity factors
Subclause2 - 5.2 Reference materials for calibration of depth scale
Clause1 - 6 Apparatus
Subclause2 - 6.1 Secondary-ion mass spectrometer
Subclause2 - 6.2 Stylus profilometer
Subclause2 - 6.3 Optical interferometer
Clause1 - 7 Specimen
Clause1 - 8 Procedures
Subclause2 - 8.1 Adjustment of secondary-ion mass spectrometer
UntitledSubclause3 - 8.1.1 For oxygen-ion beam use, see
UntitledSubclause3 - 8.1.2 For the primary-ion beam, the beam current and scan region can be v...
Subclause2 - 8.2 Optimizing the secondary-ion mass spectrometer settings
UntitledSubclause3 - 8.2.1 Set the required instrument parameters and align the ion optics in ...
UntitledSubclause3 - 8.2.2 Ensure the stability of the primary-ion current and the mass spectr...
UntitledSubclause3 - 8.2.3 For a mass spectrometer whose transmission can be varied, use the s...
Subclause2 - 8.3 Specimen introduction
Subclause2 - 8.4 Detected ions
UntitledSubclause3 - 8.4.1 When an oxygen-ion beam is used, both
UntitledSubclause3 - 8.4.2 The ion species of silicon which has an appropriate ion intensity s...
Subclause2 - 8.5 Measurement of test specimen
UntitledSubclause3 - 8.5.1 Measurements shall be made in the central region of the specimen ho...
UntitledSubclause3 - 8.5.2 The primary-ion beam current and the beam scan area shall be chosen...
UntitledSubclause3 - 8.5.3 The secondary-ion intensities of boron and silicon shall be measure...
Subclause2 - 8.6 Calibration
Subclause3 - 8.6.1 Determination of relative-sensitivity factor
Subclause3 - 8.6.2 Calibration of depth scale by stylus profilometry
UntitledSubclause4 - 8.6.2.1 Calibrate the stylus profilometer for crater depth measurements u...
UntitledSubclause4 - 8.6.2.2 Measure the crater depth
Subclause3 - 8.6.3 Calibration of depth scale by optical interferometry
UntitledSubclause4 - 8.6.3.1 Measure the crater depth
UntitledSubclause4 - 8.6.3.2 Detailed procedures for measurement of interference fringes shall...
UntitledSubclause4 - 8.6.3.3 The crater depth shall be obtained using the following formula:
Clause1 - 9 Expression of results
UntitledSubclause2 - 9.1 Ion intensity ratios of boron to silicon shall be determined for each...
UntitledSubclause2 - 9.2 The boron atomic concentration of the test specimen shall be determin...
UntitledSubclause2 - 9.3 When necessary, the background intensity of boron shall be subtracted...
UntitledSubclause2 - 9.4 The depth for measurement cycle
UntitledSubclause2 - 9.5 When the total number of measurement cycles
UntitledSubclause2 - 9.6 When graphical expression of the results is necessary,
Clause1 - 10 Test report
AnnexInformative - Statistical report of stylus profilometry measurements
Clause1 - A.1 Introduction
Clause1 - A.2 Design of test programme
Clause1 - A.3 Test specimen
Clause1 - A.4 Procedure of stylus measurement
Clause1 - A.5 Statistical procedures
Subclause2 - A.5.1 Scrutiny for consistency and outliers
Subclause2 - A.5.2 Computation of repeatability and reproducibility
Clause1 - A.6 Results of statistical analysis
UntitledSubclause2 - A.6.1 The results of the statistical analysis are given in
Bibliography - Bibliography
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TitlePage - Surface chemical analysis— Secondary-ion mass spectrometry— Method for depth profil...
TableofContent - Contents Page
Foreword - Foreword
Introduction - Introduction
Scope - 1 Scope
NormativeReference - 2 Normative reference
Clause1 - 3 Symbols and abbreviated terms
Clause1 - 4 Principle
Clause1 - 5 Reference materials
Subclause2 - 5.1 Reference materials for determination of relative-sensitivity factors
Subclause2 - 5.2 Reference materials for calibration of depth scale
Clause1 - 6 Apparatus
Subclause2 - 6.1 Secondary-ion mass spectrometer
Subclause2 - 6.2 Stylus profilometer
Subclause2 - 6.3 Optical interferometer
Clause1 - 7 Specimen
Clause1 - 8 Procedures
Subclause2 - 8.1 Adjustment of secondary-ion mass spectrometer
UntitledSubclause3 - 8.1.1 For oxygen-ion beam use, see
UntitledSubclause3 - 8.1.2 For the primary-ion beam, the beam current and scan region can be v...
Subclause2 - 8.2 Optimizing the secondary-ion mass spectrometer settings
UntitledSubclause3 - 8.2.1 Set the required instrument parameters and align the ion optics in ...
UntitledSubclause3 - 8.2.2 Ensure the stability of the primary-ion current and the mass spectr...
UntitledSubclause3 - 8.2.3 For a mass spectrometer whose transmission can be varied, use the s...
Subclause2 - 8.3 Specimen introduction
Subclause2 - 8.4 Detected ions
UntitledSubclause3 - 8.4.1 When an oxygen-ion beam is used, both
UntitledSubclause3 - 8.4.2 The ion species of silicon which has an appropriate ion intensity s...
Subclause2 - 8.5 Measurement of test specimen
UntitledSubclause3 - 8.5.1 Measurements shall be made in the central region of the specimen ho...
UntitledSubclause3 - 8.5.2 The primary-ion beam current and the beam scan area shall be chosen...
UntitledSubclause3 - 8.5.3 The secondary-ion intensities of boron and silicon shall be measure...
Subclause2 - 8.6 Calibration
Subclause3 - 8.6.1 Determination of relative-sensitivity factor
Subclause3 - 8.6.2 Calibration of depth scale by stylus profilometry
UntitledSubclause4 - 8.6.2.1 Calibrate the stylus profilometer for crater depth measurements u...
UntitledSubclause4 - 8.6.2.2 Measure the crater depth
Subclause3 - 8.6.3 Calibration of depth scale by optical interferometry
UntitledSubclause4 - 8.6.3.1 Measure the crater depth
UntitledSubclause4 - 8.6.3.2 Detailed procedures for measurement of interference fringes shall...
UntitledSubclause4 - 8.6.3.3 The crater depth shall be obtained using the following formula:
Clause1 - 9 Expression of results
UntitledSubclause2 - 9.1 Ion intensity ratios of boron to silicon shall be determined for each...
UntitledSubclause2 - 9.2 The boron atomic concentration of the test specimen shall be determin...
UntitledSubclause2 - 9.3 When necessary, the background intensity of boron shall be subtracted...
UntitledSubclause2 - 9.4 The depth for measurement cycle
UntitledSubclause2 - 9.5 When the total number of measurement cycles
UntitledSubclause2 - 9.6 When graphical expression of the results is necessary,
Clause1 - 10 Test report
AnnexInformative - Statistical report of stylus profilometry measurements
Clause1 - A.1 Introduction
Clause1 - A.2 Design of test programme
Clause1 - A.3 Test specimen
Clause1 - A.4 Procedure of stylus measurement
Clause1 - A.5 Statistical procedures
Subclause2 - A.5.1 Scrutiny for consistency and outliers
Subclause2 - A.5.2 Computation of repeatability and reproducibility
Clause1 - A.6 Results of statistical analysis
UntitledSubclause2 - A.6.1 The results of the statistical analysis are given in
Bibliography - Bibliography